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1 pc LL2705 SOT-223 LL2705TRPBF N CHANNEL MOSFET 55V 3.8A FOR GM Cluster Display
1 pc LL2705 SOT-223 LL2705TRPBF N CHANNEL MOSFET 55V 3.8A FOR GM Cluster Display
1 pc LL2705 SOT-223 LL2705TRPBF N CHANNEL MOSFET 55V 3.8A FOR GM Cluster Display
1 pc LL2705 SOT-223 LL2705TRPBF N CHANNEL MOSFET 55V 3.8A FOR GM Cluster Display
1 pc LL2705 SOT-223 LL2705TRPBF N CHANNEL MOSFET 55V 3.8A FOR GM Cluster Display

1 pc LL2705 SOT-223 LL2705TRPBF N CHANNEL MOSFET 55V 3.8A FOR GM Cluster Display

$ 4.15

Availability: 47 in stock
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  • Returns Accepted: Returns Accepted
  • Condition: New
  • Refund will be given as: Money back or replacement (buyer's choice)
  • Brand: IOR
  • Placement on Vehicle: Front
  • Manufacturer Part Number: LL2705TRPBF
  • Country/Region of Manufacture: United States
  • Other Part Number: na
  • Restocking Fee: No
  • Item must be returned within: 60 Days
  • Return shipping will be paid by: Seller

    Description

    Welcome, ResourceRiver Introducing our new
    60 DAYS
    Return Promise
    Infineon Technologies AG
    offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2014 fiscal year (ending September 30), the company reported revenues of 4.32 billion euros with approximately 29,800 employees worldwide.
    Infineon Technologies AG LL2705 SOT-223 LL2705TRPBF N CHANNEL MOSFET 55V 3.8A
    Overview:
    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
    The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick- and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 55V
    Current - Continuous Drain (Id) @ 25°C
    3.8A (Ta)
    Surface Mount
    Dynamic dv/dt Rating
    Logic-Level Gate Drive
    Fast Switching
    Ease of Paralleling
    Advanced Process Technology
    Ultra Low On-Resistance
    Lead-Free
    Operating Temperature
    -55°C ~ 150°C
    What's Included:
    Qty: 1
    IRLL2705TRPBF
    Manufacture
    Infineon Technologies
    Application:
    Cluster Display Repair Silverado Yukon Tahoe Suburban Sierra
    07-13 Chevy Silverado / GMC Sierra
    07-13 Avalanche
    07-13 Tahoe Yukon Suburban
    When the mosfet fails the info displays go either dim or dark
    .
    Specifications
    Brand/Series
    :
    Hexfet Series
    Capacitance, Input
    :
    870 pF @ 25 V
    Channel Type
    :
    N
    Configuration
    :
    Single
    Current, Drain
    :
    5.2 A
    Dimensions
    :
    6.70 x 3.70 x 1.45 mm
    Gate Charge, Total
    :
    32 nC
    Height
    :
    0.057" (1.45mm)
    Length
    :
    0.263" (6.7mm)
    Mounting Type
    :
    Surface Mount
    Number of Elements per Chip
    :
    1
    Number of Pins
    :
    3
    Package Type
    :
    SOT-223
    Polarization
    :
    N-Channel
    Power Dissipation
    :
    2.1 W
    Product Header
    :
    Hexfet® Power MOSFET
    Resistance, Drain to Source On
    :
    0.065 Ω
    Temperature, Operating, Maximum
    :
    +150 °C
    Temperature, Operating, Minimum
    :
    -55 °C
    Temperature, Operating, Range
    :
    -55 to +150 °C
    Time, Turn-Off Delay
    :
    35 ns
    Time, Turn-On Delay
    :
    6.2 ns
    Transconductance, Forward
    :
    5.1 S
    Typical Gate Charge @ Vgs
    :
    32 nC @ 10 V
    Voltage, Breakdown, Drain to Source
    :
    55 V
    Voltage, Drain to Source
    :
    55 V
    Voltage, Forward, Diode
    :
    1.3 V
    Voltage, Gate to Source
    :
    ±16 V
    Width
    :
    0.146" (3.7mm)