2x GM Cluster Display Repair Silverado Yukon Tahoe Suburban Sierra, LL2705 MOSF

Description

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Infineon Technologies AG
offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2014 fiscal year (ending September 30), the company reported revenues of 4.32 billion euros with approximately 29,800 employees worldwide.
Infineon Technologies AG LL2705 SOT-223 LL2705TRPBF N CHANNEL MOSFET 55V 3.8A
Overview:
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick- and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta)
Surface Mount
Dynamic dv/dt Rating
Logic-Level Gate Drive
Fast Switching
Ease of Paralleling
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Operating Temperature
-55°C ~ 150°C
What's Included:
Qty: 2
IRLL2705TRPBF
Manufacture
Infineon Technologies
Application:
Cluster Display Repair Silverado Yukon Tahoe Suburban Sierra
07-13 Chevy Silverado / GMC Sierra
07-13 Avalanche
07-13 Tahoe Yukon Suburban
When the mosfet fails the info displays go either dim or dark
.
Specifications
Brand/Series
:
Hexfet Series
Capacitance, Input
:
870 pF @ 25 V
Channel Type
:
N
Configuration
:
Single
Current, Drain
:
5.2 A
Dimensions
:
6.70 x 3.70 x 1.45 mm
Gate Charge, Total
:
32 nC
Height
:
0.057" (1.45mm)
Length
:
0.263" (6.7mm)
Mounting Type
:
Surface Mount
Number of Elements per Chip
:
1
Number of Pins
:
3
Package Type
:
SOT-223
Polarization
:
N-Channel
Power Dissipation
:
2.1 W
Product Header
:
Hexfet® Power MOSFET
Resistance, Drain to Source On
:
0.065 Ω
Temperature, Operating, Maximum
:
+150 °C
Temperature, Operating, Minimum
:
-55 °C
Temperature, Operating, Range
:
-55 to +150 °C
Time, Turn-Off Delay
:
35 ns
Time, Turn-On Delay
:
6.2 ns
Transconductance, Forward
:
5.1 S
Typical Gate Charge @ Vgs
:
32 nC @ 10 V
Voltage, Breakdown, Drain to Source
:
55 V
Voltage, Drain to Source
:
55 V
Voltage, Forward, Diode
:
1.3 V
Voltage, Gate to Source
:
±16 V
Width
:
0.146" (3.7mm)